Methods And Materials For Modifying The Threshold Voltage Of Metal Oxide Stacks

ABSTRACT

Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Provisional Application No.62/597,394, filed Dec. 11, 2017, the entire disclosure of which ishereby incorporated by reference herein.

FIELD

Embodiments of the disclosure generally relate to the fabrication ofsemiconductors, including processes for formation of metal oxide stacks.More particularly, embodiments of the disclosure are directed to methodsand materials for modifying the threshold voltage of metal oxide gatestacks.

BACKGROUND

The metal-oxide-semiconductor field-effect transistor (MOSFET) is a typeof field-effect transistor (FET). It has an insulated gate, whosevoltage determines the conductivity of the device. This ability tochange conductivity with the amount of applied voltage is used foramplifying or switching electronic signals.

The MOSFET is by far the most common transistor in digital circuits, ashundreds of thousands or millions of them may be included in a memorychip or microprocessor. Since MOSFETs can be made with either p-type orn-type semiconductors, complementary pairs of MOS transistors can beused to make switching circuits with very low power consumption, in theform of CMOS logic.

The ability to modify the threshold voltage of a given MOSFET allows forgreater flexibility in design. Threshold voltage (V_(t)) and/or workfunction can be tuned by depositing a dielectric cap layer on theMOSFET, followed by a high-temperature anneal process. Typically,aluminum is used for p-MOS shifts and lanthanum is used for n-MOSshifts.

Unfortunately, each of these materials has limitations. Lanthanumtypically requires a very high-temperature anneal (e.g. >900° C.) whichcan make integration into process flows difficult, especially withreplacement metal gates. Aluminum typically fails to provide asufficient shift.

Therefore, there is a need in the art for methods and materials formodifying the threshold voltage of MOSFETs.

SUMMARY

One or more embodiments of the disclosure are directed to a methodcomprising providing a substrate comprising a metal oxide stack. Themetal oxide stack comprising a dielectric layer, a high-k dielectriclayer and an interface between the dielectric layer and the high-kdielectric layer. A cap layer is deposited on the high-k dielectriclayer. The cap layer comprises at least one metal selected from Co, Ni,Mn, Mo and Ga. The metal oxide stack is annealed to modify a thresholdvoltage of the metal oxide stack.

Additional embodiments of the disclosure are directed to methodscomprising providing a substrate comprising a metal oxide stack. Themetal oxide stack comprises an SiO₂ layer, an HfO₂ layer and aninterface between the SiO₂ layer and the HfO₂ layer. A cap layer isdeposited on the HfO₂ layer. The cap layer comprises at least one metalselected from Co, Ni, or Mn. The metal oxide stack is annealed under aN₂ atmosphere at a temperature less than or equal to 550° C. to diffusethe at least one metal through the HfO₂ layer to the interface and lowera threshold voltage of the metal oxide stack.

Further embodiments of the disclosure are directed to methods comprisingproviding a substrate comprising a metal oxide stack. The metal oxidestack comprises an SiO₂ layer, an HfO₂ layer and an interface betweenthe SiO₂ layer and the HfO₂ layer. A cap layer is deposited on the HfO₂layer by atomic layer deposition. The cap layer consists essentially ofa material with a general formula M^(a) _(x)M^(b) _(y)L_(z), where M^(a)is selected from Ta or Ti, M^(b) is selected from Co, Ni, or Mn, and Lis selected from N, O or C. The metal oxide stack is annealed under a N₂atmosphere at a temperature in a range of about 375° C. to about 550° C.to diffuse M^(b) through the HfO₂ layer to the interface, lower athreshold voltage of the metal oxide stack and leave a layer comprisingM^(a) on the HfO₂ layer.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

The FIGURE illustrates a processing method in accordance with one ormore embodiment of the disclosure.

In the appended FIGURE, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel that distinguishes among the similar components. If only the firstreference label is used in the specification, the description isapplicable to any one of the similar components having the same firstreference label irrespective of the second reference label.

DETAILED DESCRIPTION

Before describing several exemplary embodiments of the disclosure, it isto be understood that the disclosure is not limited to the details ofconstruction or process steps set forth in the following description.The disclosure is capable of other embodiments and of being practiced orbeing carried out in various ways.

As used in this specification and the appended claims, the term“substrate” refers to a surface, or portion of a surface, upon which aprocess acts. It will also be understood by those skilled in the artthat reference to a substrate can refer to only a portion of thesubstrate, unless the context clearly indicates otherwise. Additionally,reference to depositing on a substrate can mean both a bare substrateand a substrate with one or more films or features deposited or formedthereon.

A “substrate” as used herein, refers to any substrate or materialsurface formed on a substrate upon which processing is performed. Forexample, a substrate surface on which processing can be performedinclude, but are not limited to, materials such as silicon, siliconoxide, strained silicon, silicon on insulator (SOI), carbon dopedsilicon oxides, silicon nitride, doped silicon, germanium, galliumarsenide, glass, sapphire, and any other materials such as metals, metalnitrides, metal alloys, and other conductive materials, depending on theapplication. Substrates include, without limitation, semiconductorwafers. Substrates may be exposed to a pretreatment process to polish,etch, reduce, oxidize, hydroxylate (or otherwise generate or grafttarget chemical moieties to impart chemical functionality), annealand/or bake the substrate surface. In addition to processing directly onthe surface of the substrate itself, in the present disclosure, any ofthe film processing steps disclosed may also be performed on anunderlayer formed on the substrate as disclosed in more detail below,and the term “substrate surface” is intended to include such underlayeras the context indicates. Thus for example, where a film/layer orpartial film/layer has been deposited onto a substrate surface, theexposed surface of the newly deposited film/layer becomes the substratesurface. What a given substrate surface comprises will depend on whatmaterials are to be deposited, as well as the particular chemistry used.

Embodiments of the disclosure advantageously provide methods ofengineering or modifying threshold voltage by altering the work functionof a gate dielectric. Some embodiments advantageously provide methodswhich are performed at low anneal temperatures. Some embodimentsadvantageously provide methods which result in large shifts in thresholdvoltage.

With reference to the FIGURE, one or more embodiment of the disclosureis directed to a method 100 for modifying the threshold voltage of ametal oxide stack. In some embodiments, the metal oxide stack is part ofa gate stack in a metal oxide semiconductor (MOS).

In some embodiments, the method 100 starts with providing a substrate110 comprising a metal oxide stack 50. The metal oxide stack 50comprises a dielectric layer 120, a high-k dielectric layer 130, and aninterface 125 between the dielectric layer and the high-k dielectriclayer. As used in this manner, the term “interface” refers to the regionbetween the dielectric layer 120 and the high-k dielectric layer 130.The skilled artisan will recognize that the interface may be one or moreatomic layers thick where the atoms from the two layers co-mingle.

In some embodiments, the method further comprises forming the metaloxide stack 50. These methods comprise forming a dielectric layer 120and forming a high-k dielectric layer 130 on the dielectric layer 120.The dielectric layer 120 and/or high-k dielectric layer 130 can beformed by any suitable technique known to the skilled artisan. Suitabletechniques include, but are not limited to, chemical vapor deposition(CVD), atomic layer deposition (ALD), plasma enhanced CVD, plasmaenhanced ALD and physical vapor deposition (PVD). The skilled artisanwill be familiar with the various deposition processes and techniquesand further description of these processes is not included.

The embodiment illustrated in the FIGURE has a separate dielectric layer120 on the substrate 110. However, the skilled artisan will recognizethat the dielectric layer 120 can be the substrate 110 or a portion ofthe substrate 110. For example, the high-k dielectric 130 can be formedon the substrate 110 to form the metal oxide stack 50. In someembodiments, the dielectric layer 120 is a different layer than thesubstrate 110.

The metal oxide stack 50 is formed on substrate 110 which can be anysuitable material or shape. In the embodiment illustrated, the substrate110 is a flat surface and the metal oxide stack 50 is represented byrectangular boxes. However, those skilled in the art will understandthat the substrate 110 can have one or more features (i.e., trenches orvias) and that the metal oxide stack 50 can be formed to conform to theshape of the substrate 110 surface.

In some embodiments, the dielectric layer 120 can be formed by oxidationof the surface of the substrate 110. In some embodiments, the dielectriclayer 120 can be deposited or formed as a film on the substrate. Thedielectric layer 120 can be any suitable material including, but notlimited to, silicon oxide. In some embodiments, the dielectric layer 120consists essentially of silicon dioxide (SiO₂). As used in thisspecification and the appended claims, the term “consists essentiallyof” means that the bulk composition (not including interface regions) ofthe subject film is greater than or equal to about 95%, 98%, 99% or99.5% of the specified material is the stated material.

The dielectric layer 120 of some embodiments is a native oxide on thesubstrate 110. For example, a silicon substrate may oxidize in air toform a native oxide layer on the silicon. In some embodiments, thethickness of the dielectric layer 120 is less than or equal to about 15Å, less than or equal to about 10 Å, less than or equal to about 9 Å,less than or equal to about 8 Å, less than or equal to about 7 Å lessthan or equal to about 6 Å or less than or equal to about 5 Å. In someembodiments, the dielectric layer 120 has a thickness in the range ofabout 2 Å to about 15 Å, or in the range of about 5 Å to about 10 Å.

A high-k dielectric layer 130 is formed or deposited on the dielectriclayer 120. The high-k dielectric layer 130 can be any suitable high-kdielectric including, but not limited to, hafnium oxide. In someembodiments, the high-k dielectric layer comprises a material with adielectric constant greater than or equal to 4, greater than or equal toabout 5, greater than or equal to about 6, greater than or equal toabout 10, or greater than or equal to about 20. In some embodiments, thehigh-k dielectric layer 130 consists essentially of hafnium oxide.

In some embodiments, the thickness of the high-k dielectric layer 130 isin the range of about 5 Å to about 30 Å. In some embodiments, thethickness of the high-k dielectric layer 130 is in the range of about 10Å to about 25 Å.

The high-k dielectric layer 130 can be formed by any suitable process.In some embodiments, the high-k dielectric layer 130 is deposited byatomic layer deposition (ALD) or chemical vapor deposition (CVD) using ahafnium precursor (e.g., tetrakis(dimethylamino)hafnium) and anoxidizing agent (e.g., O₂).

Referring again to the FIGURE, the method 100 continues with depositinga cap layer 140 on the high-k dielectric layer 130. The cap layer 140can be deposited by any suitable method. In some embodiments, the caplayer 140 is deposited by atomic layer deposition (ALD).

The cap layer 140 can be any suitable material. In some embodiments, thecap layer 140 comprises at least one metal selected from cobalt (Co),nickel (Ni), manganese (Mn), molybdenum (Mo) and/or gallium (Ga). Insome embodiments, the cap layer 140 consists essentially of one or moremetals.

In some embodiments, the cap layer comprises nitrogen (N) and the caplayer is a metal nitride layer. In some embodiments, the cap layercomprises oxygen (O) and the cap layer is a metal oxide layer. In someembodiments, the cap layer comprises carbon (C) and the cap layer is ametal carbide layer. In some embodiments, the cap layer comprises one ormore of N, O or C. In some embodiments, the cap layer consistsessentially of a metal nitride. In some embodiments, the cap layerconsists essentially of a metal oxide. In some embodiments, the caplayer consists essentially of a metal carbide. In some embodiments, thecap layer comprises one or more of a metal oxycarbide, metal oxynitride,metal carbonitride or metal oxycarbonitride. As used in this regard, ametal oxide may comprise a single metal species or a metal alloy ofmultiple metal species.

In some embodiments, the cap layer 140 comprises more than one metalspecies. In some embodiments, the cap layer 140 comprises more than onemetal and only one metal is selected from Co, Ni, Mn, Mo and Ga. Inthese embodiments, the other metal is selected from tantalum (Ta) andtitanium (Ti).

In some embodiments, the cap layer comprises a material with a generalformula M^(a) _(x)M^(b) _(y)L_(z), where M^(a) is selected from Ta orTi, M^(b) is selected from Co, Ni, Mn, Mo, or Ga, and L is selected fromone or more of N, O or C. In some embodiments, the cap layer consistsessentially of a material with a general formula M^(a) _(x)M^(b)_(y)L_(z), where M^(a) is selected from Ta or Ti, M^(b) is selected fromCo, Ni, Mn, Mo, or Ga, and L is selected from one or more of N, O or C.The ratio of x to y to z can be any suitable ratio and is not limited to1:1:1.

The cap layer 140 of some embodiments has a thickness in the range ofabout 5 Å to about 20 Å.

After the cap layer 140 is deposited, the method 100 continues with ananneal process. In some embodiments, annealing the substrate diffusesthe metal from the cap layer 140 through the high-k dielectric layer 130to the interface 125 between the dielectric layer 120 and the high-kdielectric layer 130. In some embodiments, greater than or equal toabout 50% of the metal selected from Co, Ni, Mn, Mo, or Ga diffusesthrough at least about 50% of the thickness of the high-k dielectriclayer 130.

Without being bound by theory, it is believed that the anneal processallows for metal atoms from the cap layer to migrate through the high-kdielectric to the interface between the high-k dielectric and thedielectric layer due to the smaller atomic radius of the cap layermetals. It is also believed that the atomic size of the metal within thecap layer and the anneal temperature affect the rate at which that metalis able to migrate through the high-k dielectric. Ultimately, thepresence of these metal atoms at the interface modifies the thresholdvoltage of the metal oxide stack.

The anneal process may be carried out under any suitable conditions. Insome embodiments, annealing is performed under an inert gas atmosphere.The inert gas of some embodiments comprises one or more of nitrogen(N₂), helium (He), neon (Ne), argon (Ar), krypton (Kr) or xenon (Xe). Insome embodiments, the inert gas consists essentially of nitrogen (N₂).

In some embodiments, the metal oxide stack is annealed at a temperatureless than or equal to about 700° C. In some embodiments, where the metalof the capping layer comprises Co, Mn or Ni, the metal stack is annealedat a temperature in the range of about 350° C. to about 550° C.

The identity of the metal in the cap layer determines whether thethreshold voltage is increased or decreased. In some embodiments, thethreshold voltage is lowered (also referred to as a pMOS shift). In someembodiments, the threshold voltage is raised (also referred to as annMOS shift).

In those embodiments where the cap layer comprises a material with ageneral formula M^(a) _(x)M^(b) _(y)L_(z), as defined previously,annealing the metal oxide stack causes M^(b) to diffuse through thehigh-k dielectric layer while M^(a) remains on the surface of the high-kdielectric layer 130. Without being bound by theory, it is believed thatin these embodiments, the layer of M^(a) which remains on the surface ofthe high-k dielectric layer 130, provides a protective cap layer for themetal oxide stack 50.

In some embodiments, the threshold voltage increases or decreases byless than or equal to about 3 eV, relative to a stack without the caplayer and annealing. In some embodiments, the threshold voltageincreases or decreases by greater than or equal to about 1 eV. In someembodiments, the threshold voltage increases or decreases in the rage ofabout +3.0 eV to about −1.0 eV. In some embodiments, the thresholdvoltage increases by an amount greater than or equal to about 1.5 eV,2.0 eV or 2.5 eV. In some embodiments, the threshold voltage decreasesby an amount greater than or equal to about 1.0 eV, 0.5 eV or −0.5 eV.

Reference throughout this specification to “one embodiment,” “certainembodiments,” “one or more embodiments” or “an embodiment” means that aparticular feature, structure, material, or characteristic described inconnection with the embodiment is included in at least one embodiment ofthe disclosure. Thus, the appearances of the phrases such as “in one ormore embodiments,” “in certain embodiments,” “in one embodiment” or “inan embodiment” in various places throughout this specification are notnecessarily referring to the same embodiment of the disclosure.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments.

Although the disclosure herein has been described with reference toparticular embodiments, it is to be understood that these embodimentsare merely illustrative of the principles and applications of thepresent disclosure. It will be apparent to those skilled in the art thatvarious modifications and variations can be made to the method andapparatus of the present disclosure without departing from the spiritand scope of the disclosure. Thus, it is intended that the presentdisclosure include modifications and variations that are within thescope of the appended claims and their equivalents.

What is claimed is:
 1. A method comprising: providing a substratecomprising a metal oxide stack, the metal oxide stack comprising adielectric layer, a high-k dielectric layer and an interface between thedielectric layer and the high-k dielectric layer; depositing a cap layeron the high-k dielectric layer, the cap layer comprising at least onemetal selected from Co, Ni, Mn, Mo and Ga; and annealing the metal oxidestack to modify a threshold voltage of the metal oxide stack.
 2. Themethod of claim 1, wherein the dielectric layer consists essentially ofSiO₂.
 3. The method of claim 1, wherein the high-k dielectric layercomprises a material with a dielectric constant greater than or equal to4.
 4. The method of claim 3, wherein the high-k dielectric layerconsists essentially of HfO₂.
 5. The method of claim 1, wherein the caplayer is deposited by atomic layer deposition.
 6. The method of claim 1,wherein the cap layer consists essentially of one or more metals.
 7. Themethod of claim 1, wherein the cap layer comprises one or more of N, Oor C.
 8. The method of claim 7, wherein the cap layer consistsessentially of a metal oxide.
 9. The method of claim 7, wherein the caplayer consists essentially of a metal nitride.
 10. The method of claim7, wherein the cap layer consists essentially of a metal carbide. 11.The method of claim 1, wherein the cap layer comprises more than onemetal species.
 12. The method of claim 11, wherein the cap layerconsists essentially of a material with a general formula M^(a)_(x)M^(b) _(y)L_(z), where M^(a) is selected from Ta or Ti, M^(b) isselected from Co, Ni, Mn, Mo, or Ga, and L is selected from N, O or C.13. The method of claim 1, wherein the metal oxide stack is annealed ata temperature less than or equal to about 700° C.
 14. The method ofclaim 13, wherein the metal is selected from Co, Mn or Ni and thetemperature is in a range of about 350° C. to about 550° C.
 15. Themethod of claim 1, wherein annealing the metal oxide stack is performedunder an inert gas atmosphere.
 16. The method of claim 15, wherein theinert gas atmosphere consists essentially of N₂.
 17. The method of claim1, wherein the threshold voltage of the metal oxide stack is lowered.18. The method of claim 1, wherein annealing the substrate diffuses theat least one metal through the high-k dielectric layer to the interface.19. A method comprising: providing a substrate comprising a metal oxidestack, the metal oxide stack comprising an SiO₂ layer, an HfO₂ layer andan interface between the SiO₂ layer and the HfO₂ layer; depositing a caplayer on the HfO₂ layer, the cap layer comprising at least one metalselected from Co, Ni, or Mn; and annealing the metal oxide stack under aN₂ atmosphere at a temperature less than or equal to 550° C. to diffusethe at least one metal through the HfO₂ layer to the interface and lowera threshold voltage of the metal oxide stack.
 20. A method comprising:providing a substrate comprising a metal oxide stack, the metal oxidestack comprising an SiO₂ layer, an HfO₂ layer and an interface betweenthe SiO₂ layer and the HfO₂ layer; depositing a cap layer on the HfO₂layer by atomic layer deposition, the cap layer consisting essentiallyof a material with a general formula M^(a) _(x)M^(b) _(y)L_(z), whereM^(a) is selected from Ta or Ti, M^(b) is selected from Co, Ni, or Mn,and L is selected from N, O or C; and annealing the metal oxide stackunder a N₂ atmosphere at a temperature in a range of about 375° C. toabout 550° C. to diffuse M^(b) through the HfO₂ layer to the interface,lower a threshold voltage of the metal oxide stack and leave a layercomprising M^(a) on the HfO₂ layer.